对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
SI1 | Semicon Components Inc | Rectifier Diode, 1 Element, 1.5A, 100V V(RRM), | - | |||||
SI1002R-T1-GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SC-75A, 3 PIN | - | |||||
AD | FS50KMJ-06F#B00 | Renesas | MOSFET/FET,FS50KMJ - Discrete / Power MOSFET | |||||
SI1077X-T1-GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SC-89, 6 PIN | ¥3.4543 | |||||
SI106-680K | Delta Electronics Inc | General Purpose Inductor, 68uH, 10%, 1 Element, SMD, ROHS COMPLIANT | - | |||||
SI1071X-T1-E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.00096A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN | - | |||||
SI12210022035 | Leclanche Capacitors | CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID | - | |||||
SI1450DH-T1-GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, | - | |||||
SI1142-A10-GM | Silicon Laboratories Inc | Photoelectric Sensor, Square, Surface Mount, 2 X 2 MM, QFN-10 | - | |||||
SI12DM-1.544MHZ | Cal Crystal Lab Inc / Comclok Inc | CMOS Output Clock Oscillator, 1.544MHz Nom, MINIATURE, HERMETIC SEALED, SMD, 4 PIN | - | |||||
SI10140022025 | Leclanche Capacitors | CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID | - | |||||
LSI1012XT1G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS(V):6, ID (A):0.5, VGSth Min (V):0.45, VGSth Max (V):0.9 | - | |||||
LSI1013LT1G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS(V):6, ID (A):0.35, VGSth Min (V):0.45, td(on) (ns):5 | - | |||||
LSI1012X6T3BG | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS (V):8, ID (A):0.6, VGS(th) (V) Min (V):0.4, VGS(th) (V) Max (V):1 | - | |||||
LSI1013N3T5G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS (V):6, ID (A):0.35, VGS(th) (V) Min (V):0.45, td(on) (ns):5 | - | |||||
NSI1312S-DSWVR | 纳芯微(NovoSense) | 6.5 , 6.5 , 5000 , ±1.2V , 100 , 5 | - | |||||
LSI1012LT1G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS(V):6, ID (A):0.5, VGSth Min (V):0.45, VGSth Max (V):0.9 | - | |||||
LSI1013XT1G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS(V):6, ID (A):0.35, VGSth Min (V):0.45, td(on) (ns):5 | - | |||||
LSI1012N3T5G | LRC Leshan Radio Co Ltd | VDSS (V):20, VGS (V):6, ID (A):0.5, VGS(th) (V) Min (V):0.45, VGS(th) (V) Max (V):0.9 | - | |||||
NSI1312S-DSPR | 纳芯微(NovoSense) | 6.5 , 6.5 , 3000 , ±1.2V , 100 , 5 | - | |||||
NSI1312D-DSWVR | 纳芯微(NovoSense) | 6.5 , 6.5 , 5000 , ±1.2V , 100 , 5 | - |