对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
ST183S02PFN0PBF | International Rectifier | Silicon Controlled Rectifier, 306A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AB | - | |||||
ST1206F536RP200.5W | Ever Ohms Technology Co Ltd | Fixed Resistor, Ruthenium Oxide, 0.5W, 536ohm, 200V, 1% +/-Tol, -100,100ppm/Cel, 1206, | - | |||||
AD | BT150-500R,127 | WeEn | 晶体闸流管/双向可控硅,WeEn - BT150-500R - Silicon Controlled Rectifier - TO-220AB | |||||
ST1206J240KP200.5W | Ever Ohms Technology Co Ltd | Fixed Resistor, Ruthenium Oxide, 0.5W, 240000ohm, 200V, 5% +/-Tol, -200,200ppm/Cel, 1206, | - | |||||
ST180S04 | Inchange Semiconductor Company Ltd | High Power SCRs;200A;400V;TO-93,TO-209AB | - | |||||
ST180S12 | Inchange Semiconductor Company Ltd | High Power SCRs;200A;1200V;TO-93,TO-209AB | - | |||||
ST180S20 | Inchange Semiconductor Company Ltd | High Power SCRs;200A;2000V;TO-93,TO-209AB | - | |||||
ST1510FX | Inchange Semiconductor Company Ltd | Bipolar Transistors;NPN;12A;750V;TO-3P(H)IS | - | |||||
ST180S16 | Inchange Semiconductor Company Ltd | High Power SCRs;200A;1600V;TO-93,TO-209AB | - | |||||
L2SA1576AST1G | LRC Leshan Radio Co Ltd | Device Marking:FS, IC (mA):150, VCEO (V):50, hFE Min / Max:120/560, hFE IC/VCE (mA)/(Volts): 1/6 | - | |||||
L2SA1774ST1G | LRC Leshan Radio Co Ltd | Device Marking:FS, IC (mA):150, VCEO (V):50, hFE Min / Max:270/560, hFE IC/VCE (mA)/(Volts): 1/6 | - | |||||
L2SC4617ST1G | LRC Leshan Radio Co Ltd | Device Marking:BS, IC (mA):150, VCEO (V):50, hFE Min / Max:270/560, hFE IC/VCE (mA)/(Volts): 1/6 | - | |||||
LN2610ST1G | LRC Leshan Radio Co Ltd | VDSS (V):60, VGS(V):20, ID (A) TA:4.4, VGSth Min (V):1, VGSth Max (V):3 | - | |||||
NST117 | 纳芯微(NovoSense) | 数字温度传感器 , DFN6 , 2.00mm × 2.00mm , 0.015625 , , -55~125 | - | |||||
ST180S08 | Inchange Semiconductor Company Ltd | High Power SCRs;200A;800V;TO-93,TO-209AB | - | |||||
NST175 | 纳芯微(NovoSense) | 数字温度传感器 , SOP8 , 4.90mm × 3.91mm , 0.0625 , , -55~125 | - | |||||
L2SC4081ST1G | LRC Leshan Radio Co Ltd | Device Marking:BS, IC (mA):150, VCEO (V):50, hFE Min / Max:270/560, hFE IC/VCE (mA)/(Volts): 1/6 | - | |||||
NST1001HA | 纳芯微(NovoSense) | 数字温度传感器 , DFN2 , 1.60mm × 0.80mm , 0.0625 , , -50~150 | - | |||||
NST112-DSTR | 纳芯微(NovoSense) | 数字温度传感器 , SOT5636 , 1.60mm × 1.20mm , 0.0625 , , -40~125 | - | |||||
NST112X | 纳芯微(NovoSense) | 数字温度传感器 , DSBGA4 , 0.75mm × 0.75mm , 0.0625 , , -40~125 | - | |||||
NST1001 | 纳芯微(NovoSense) | 数字温度传感器 , DFN2 , 1.60mm × 0.80mm , 0.0625 , , -50~150 | - |