对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
TD1105020KC71 | Vishay Roederstein | CAPACITOR, TANTALUM, SOLID, POLARIZED, 20V, 1uF, SURFACE MOUNT, 1707, CHIP | - | |||||
TD180F12KSL-K | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 350A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, | - | |||||
AD | STPTIC-82G2C4 | Arrow | Cap Tunable Integrated Capacitor 8.2pF Solder Ball SMD WLCSP 85°C T/R | |||||
TD101F08KFB-K | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, | - | |||||
TD101F08KEM-K | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, | - | |||||
TD111F02KEM | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, MODULE-5 | - | |||||
TD101F12KEC | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5 | - | |||||
TD101F12KFM-K | Infineon Technologies AG | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element | - | |||||
TD1-06HR | Kodenshi Corporation | Photo Transistor, | - | |||||
TD101F14KSC-A | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, | - | |||||
TD111F04KDC | Infineon Technologies AG | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, MODULE-5 | - | |||||
KTD1898 | Luguang Electronic Technology | 双极型晶体管, 80V, 1A, 100MHZ, -55-150℃ | - | |||||
SBTD10150VCT | Galaxy Microelectronics | 10A,150V,Schottky Barrier Rectifiers, Diodes, Dual,Common Cathode, 150V, 10A, 0.79V, 5A, 150A | - | |||||
TSBTD10100CT | Galaxy Microelectronics | 10A,100V,Schottky Barrier Rectifiers, Diodes, Dual,Common Cathode, 100V, 10A, 0.7V, 5A, 150A | - | |||||
SBTD10300S | Galaxy Microelectronics | 10A,300V,Schottky Barrier Rectifiers, Diodes, Single, 300V, 10A, 0.92V, 10A, 180A | - | |||||
SBTD10150CT | Galaxy Microelectronics | 10A,150V,Schottky Barrier Rectifiers, Diodes, Dual,Common Cathode, 150V, 10A, 0.86V, 5A, 150A | - | |||||
SBTD10100VCT | Galaxy Microelectronics | 10A,100V,Schottky Barrier Rectifiers, Diodes, Dual,Common Cathode, 100V, 10A, 0.62V, 5A, 150A | - | |||||
SBTD1045CT | Galaxy Microelectronics | 10A,45V,Schottky Barrier Rectifiers, Diodes, Dual,Common Cathode, 45V, 10A, 0.48V, 5A, 150A | - | |||||
STD15NF10T4 | Inchange Semiconductor Company Ltd | MOSFETs;23A;100VV;TO-252 | - | |||||
STD11NM50N | Inchange Semiconductor Company Ltd | MOSFETs;8.5A;500V;DPAK/TO-252 | - | |||||
STD14NM50N | Inchange Semiconductor Company Ltd | MOSFETs;12A;500V;DPAK/TO-252 | - |