对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
TD18012200J0G | Amphenol FCi | Barrier Strip Terminal Block | - | |||||
TD180F11KEL-A | Infineon Technologies AG | Silicon Controlled Rectifier, 350A I(T)RMS, 180000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element | - | |||||
AD | 3-520133-2 | Arrow | Quick Disconnect Terminal 14-16AWG Brass Blue RCP 16.05mm Tin Carton/Loose | |||||
TD14-12028S1-52.000-HZ-R | Aker Technology Company Ltd | Oscillator | - | |||||
TD111F06KDL | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, MODULE-5 | - | |||||
TD100-300-05I | Natel Engineering Company | DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid | - | |||||
TD1001YT1 | Vishay Intertechnologies | Power Field-Effect Transistor, 0.76A I(D), 30V, 1.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
TD111F06KEL-A | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, | - | |||||
TD180F10KSB-A | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 350A I(T)RMS, 180000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, | - | |||||
TD162N14KOF | Eupec Gmbh & Co Kg | Silicon Controlled Rectifier, 260A I(T)RMS, 162000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 | - | |||||
TD111F04KDC | Infineon Technologies AG | Silicon Controlled Rectifier, 200A I(T)RMS, 101000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, MODULE-5 | - | |||||
SBTD10300S | Galaxy Microelectronics | 10A,300V,Schottky Barrier Rectifiers, Diodes, Single, 300V, 10A, 0.92V, 10A, 180A | - | |||||
KTD1898 | Luguang Electronic Technology | 双极型晶体管, 80V, 1A, 100MHZ, -55-150℃ | - | |||||
SBTD10300 | Galaxy Microelectronics | 10A,300V,Schottky Barrier Rectifiers, Diodes, Single, 300V, 10A, 0.92V, 10A, 180A | - | |||||
KTD1304 | Luguang Electronic Technology | 双极型晶体管, 20V, 0.3A, 60MHZ, -55-150℃ | - | |||||
STD140N6F7 | Inchange Semiconductor Company Ltd | MOSFETs;80A;60V;DPAK | - | |||||
STD18N55M5 | Inchange Semiconductor Company Ltd | MOSFETs;16A;550V;DPAK/TO-252 | - | |||||
KTD1414 | Inchange Semiconductor Company Ltd | Bipolar Transistors;NPN;4A;80V;TO-220F | - | |||||
LDTD123TLT1G | LRC Leshan Radio Co Ltd | Device Marking:E1, IC (mA):500, VCEO (V):40, hFE @ IC Min:100, hFE @ IC Max:600 | - | |||||
LDTD123EWT1G | LRC Leshan Radio Co Ltd | Device Marking:E5, IC (mA):500, VCEO (V):50, hFE @ IC Min:39, hFE @ IC (mA):50 | - | |||||
LDTD114ELT1G | LRC Leshan Radio Co Ltd | Device Marking:CA, IC (mA):500, VCEO (V):50, hFE @ IC Min:100, hFE @ IC Max:600 | - |