efficient power conversionepc2012中文数据手册-datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	EPC2012	Efficient Power Conversion	Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4	获取价格 -	请求模型数据手册替代料
对比	EPC2012CENGR	Efficient Power Conversion	Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.70 X 0.90 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-4	获取价格 -	请求模型数据手册替代料
AD	EPCV4SI8N	Altera	非易失性存储器,EPCV4SI8N - Configuration Device 数据手册立即购买了解更多		数据手册立即购买
对比	EPC2012C	Efficient Power Conversion	Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4	获取价格 -	请求模型数据手册替代料

EPC2012