随身查
扫码添加小程序
手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| EPC2016 | Efficient Power Conversion | Power Field-Effect Transistor, 11A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 | - | |||||
| EPC2016C | Efficient Power Conversion | Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 | - | |||||
| AD | EPCV4SI8N | Altera | 非易失性存储器,EPCV4SI8N - Configuration Device | |||||
苏公网安备 32059002001873号 Do not sell or share my personal information 
登录 