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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| EPC2034 | Efficient Power Conversion | TRANS GAN 200V 48A BUMPED DIE | - | |||||
| EPC2034ENGR | Efficient Power Conversion | Power Field-Effect Transistor, 31A I(D), 200V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 4.60 X 2.60 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-24 | - | |||||
| AD | EPCV4SI8N | Altera | 非易失性存储器,EPCV4SI8N - Configuration Device | |||||
| EPC2034C | Efficient Power Conversion | Power Field-Effect Transistor, 48A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-24 | - | |||||
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