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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FLM5964-25DA | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM5964-35DA | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| AD | LM5101AMX/NOPB | Texas Instruments | 桥式驱动器，高低压开关,LM5101A 3A High Voltage High-Side and Low-Side Gate Driver | |||||
| FLM5972-8F | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | - | |||||
| FLM5964-12DA | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM5964-4F | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | - | |||||
| FLM5964-8F | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | - | |||||
| FLM5359-4F | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | - | |||||
| FLM5359-4C | FUJITSU Limited | Transistor | - | |||||
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