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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FLM6472-25F | FUJITSU Semiconductor Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM6472-25DA | FUJITSU Semiconductor Limited | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| AD | A2T21H360-24SR6 | NXP Semiconductor | 射频/微波组件,Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |||||
| FLM6472-12DA | FUJITSU Semiconductor Limited | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM6472-35DA | FUJITSU Semiconductor Limited | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM6472-4F | FUJITSU Semiconductor Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM6472-6F | FUJITSU Semiconductor Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLM6472-8F | FUJITSU Semiconductor Limited | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
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