对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FDT86113LZ | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 3.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | ¥6.8766 | |||||
FDT55AN06LA0 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | ¥3.9569 | |||||
AD | BFU910FX | NXP Semiconductor | 射频/微波组件,BFU910F - RF Small Signal Bipolar Transistor | |||||
FDT457N_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT461N-F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
FDT458PS62Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT457ND84Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 | - | |||||
FDT3612S62Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT3612L99Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT3612 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT459NJ23Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 3 PIN | - | |||||
FDT434PJ23ZD84Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT86246 | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | - | |||||
FDT86244 | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2.8A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | ¥6.5870 | |||||
FDT434P_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | - | |||||
FDT3612J23Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.7A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 3 PIN | - | |||||
FDT439N | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ¥9.0481 | |||||
FDT439NS62Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT458PJ23Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 3 PIN | - | |||||
FDT458PL99Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
FDT3N40TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | - |