Fri Apr 26 2024 12:59:33 GMT+0800 (China Standard Time)

随身查
mini app
扫码添加小程序
手机随时查器件

IRL

” 的搜索结果(共 141 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 IRLW620A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL640S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
获取价格 - ECAD2
请求模型
request
数据手册
替代料
AD IRLL014NTRPBF Arrow
Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3+Tab) SOT-223 T/R
对比 IRLM120AS62Z Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLR210A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL640 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL610 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL510 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLR210ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLM220ATF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-223, 4 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLM120AD84Z Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL510J69Z Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLI540A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLS520A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLW620ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLR210ATF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL520A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, AE, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLR230ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRLS610A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL520S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 IRL640AJ69Z Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比栏已满,请删除不需要的器件再继续添加哦!
对比栏
取消