对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
ISL9N312AP3 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
ISL9R1560S3ST | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB | - | |||||
AD | ISL21007BFB825Z-TK | Renesas | 电压基准,ISL21007 - Three Terminal Voltage Reference, 1 Output, 2.5V, Trim/Adjustable, CMOS, PDSO8 | |||||
ISL9R1560P2 | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC | - | |||||
ISL9R460P2 | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN | - | |||||
ISL9R3060G2_F085 | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247AB, 3/2 PIN | ¥37.8574 | |||||
ISL9N322AP3 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 35A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
ISL9R860S3STL99Z | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, | - | |||||
ISL9R18120G2_NL | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247, LEAD FREE, TO-247, 2 PIN | - | |||||
ISL9R460S3STS62Z | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB, | - | |||||
ISL9R18120G2 | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN | - | |||||
ISL9R860PF2 | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, TO-220F, 2 PIN | - | |||||
ISL9V2540S3ST-SB49015 | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 15.5A I(C), 450V V(BR)CES, N-Channel | - | |||||
ISL9V5036S3STL99Z | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 | - | |||||
ISL9N304AS3STL99Z | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 75A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
ISL9G2060ES3 | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB | - | |||||
ISL9V5036P3 | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | ¥11.6495 | |||||
ISL9K1560G3 | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247 | - | |||||
ISL9R3060P2_NL | Fairchild Semiconductor Corporation | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC, LEAD FREE, TO-220AC, 2 PIN | - | |||||
ISL9N312AD3ST | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | - | |||||
ISL9N304AP3 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 75A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - |