对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
SFR9220TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.1A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9230B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
AD | FGAF20N60SMD | Onsemi | IGBT/MOSFET驱动器,Insulated Gate Bipolar Transistor, 40A, 600V, N-Channel | |||||
SFR9230BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9220 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.1A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9224TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.5A I(D), 250V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9110TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9230TF | Fairchild Semiconductor Corporation | Transistor | - | |||||
SFR9230BTM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9120 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9130TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9014TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9230 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
SFR9120TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9024TM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | - | |||||
SFR9214 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9214TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9220TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.1A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9034TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9310TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.5A I(D), 400V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
SFR9130 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 | - |