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SM9

” 的搜索结果(共 57 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 RF1S25N06SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
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数据手册
替代料
对比 RF1S540SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
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数据手册
替代料
AD FZ1800R12HP4B9HOSA2 Infineon Technologies
IGBT模块,FZ1800R12 - IGBT Module
对比 RFD16N06LESM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
获取价格 ¥11.8123 ECAD2
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数据手册
替代料
对比 RF1S9530SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
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数据手册
替代料
对比 RF1S9540SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RF1S40N10LESM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RF1S60P03SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 60A I(D), 30V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RF1S30P05SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RFD14N05LSM9A_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RF1S9630SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RFD4N06LSM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RF1S30N06LESM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RF1S630SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RF1S50N06LESM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
请求模型
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数据手册
替代料
对比 RF1S22N10SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RFD16N05LSM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RFD3055LESM9A_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RFD16N05SM9A_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RFD3055LESM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 RF1S50N06SM9A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
获取价格 - ECAD2
请求模型
request
数据手册
替代料
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