对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
RF1S25N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - | |||||
RF1S540SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - | |||||
AD | FZ1800R12HP4B9HOSA2 | Infineon Technologies | IGBT模块,FZ1800R12 - IGBT Module | |||||
RFD16N06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | ¥11.8123 | |||||
RF1S9530SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - | |||||
RF1S9540SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - | |||||
RF1S40N10LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RF1S60P03SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 60A I(D), 30V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RF1S30P05SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RFD14N05LSM9A_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN | - | |||||
RF1S9630SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RFD4N06LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | - | |||||
RF1S30N06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RF1S630SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | - | |||||
RF1S50N06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - | |||||
RF1S22N10SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | - | |||||
RFD16N05LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | - | |||||
RFD3055LESM9A_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN | - | |||||
RFD16N05SM9A_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | - | |||||
RFD3055LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN | - | |||||
RF1S50N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | - |