对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2SK1083M | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
2SK1547-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AD | 2SK3714-S12-AZ | Renesas | MOSFET/FET,2SK3714-S12-AZ - Switching N-Channel Power MOSFET | |||||
2SK1085-M | Fuji Electric Co Ltd | Power Field-Effect Transistor, 3A I(D), 150V, 1.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F15, 3 PIN | - | |||||
2SK1015-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 18A I(D), 450V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
2SK1969-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 50A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
2SK1663-S | Fuji Electric Co Ltd | Power Field-Effect Transistor, 3A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | - | |||||
2SK1944-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
2SK1820-01L | Fuji Electric Co Ltd | Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | - | |||||
2SK1010-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
2SK1942-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
2SK1082-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 6A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
2SK1101-01M | Fuji Electric Co Ltd | Power Field-Effect Transistor, 10A I(D), 450V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
2SK1020 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 30A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN | - | |||||
2SK1224-01 | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
2SK1101 | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
2SK1818MR | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN | - | |||||
2SK1096-MR | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | - | |||||
2SK1389 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 50A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
2SK1816S | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
2SK1817 | Fuji Electric Co Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - |