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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SK2925SG | Galaxy Microelectronics | Power Field-Effect Transistor, | - | |||||
| 2SK3019G | Galaxy Microelectronics | Small Signal Field-Effect Transistor, | - | |||||
| AD | 2SK3714-S12-AZ | Renesas | MOSFET/FET,2SK3714-S12-AZ - Switching N-Channel Power MOSFET | |||||
| 2SK3018G | Galaxy Microelectronics | Small Signal Field-Effect Transistor, | - | |||||
| 2SK2925S | Galaxy Microelectronics | Power Field-Effect Transistor, | - | |||||
| 2SK3018 | Galaxy Microelectronics | Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.2W; V(BR)DSS Min (V): 30V; ID Max (A): 0.1A; RDS(ON) Max (Ω): 8 Ohm; ID (A): 0.01A; VGS (V): 4V; ID (mA): 100mA; GFS Min (S): 0.02 S; VDS (V): 3V; Package: SOT-23 | - | |||||
| 2SK2925S | Galaxy Microelectronics | , Diodes, Single, N, Y, 20W, 60W, ±20V | - | |||||
| 2SK3018 | Galaxy Microelectronics | , Diodes, Single, N, N, 0.2W, 30W, ±20V | - | |||||
| 2SK3019 | Galaxy Microelectronics | , Diodes, Single, N, N, 0.15W, 30W, ±20V | - | |||||
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