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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| BCW60C | Galaxy Microelectronics | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 32V; IC (A): 0.1A; HFE Min: 250; HFE Max: 460; VCE (V): 5V; IC (mA): 2mA; VCE(SAT) (V): 0.55V; IC (mA)1: 50mA; IB (mA): 1.25mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.25W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
| BCW60D | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
| AD | PSMN3R5-80PS,127 | Nexperia | MOSFET/FET,Nexperia PSMN3R5-80PS - 120A, 80V, 0.0035ohm, N-Channel Power MOSFET, TO-220AB | |||||
| BCW72 | Galaxy Microelectronics | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 0.1A; HFE Min: 200; HFE Max: 450; VCE (V): 5V; IC (mA): 2mA; VCE(SAT) (V): 0.25V; IC (mA)1: 10mA; IB (mA): 0.5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.25W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
| BCW67C | Galaxy Microelectronics | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | - | |||||
| BCW66H | Galaxy Microelectronics | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 0.8A; HFE Min: 250; HFE Max: 630; VCE (V): 1V; IC (mA): 100mA; VCE(SAT) (V): 0.7V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 170 MHz; PTM Max (W): 0.33W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
| BCW61 | Galaxy Microelectronics | Transistor, | - | |||||
| BCW66G | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
| BCW68H | Galaxy Microelectronics | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, | - | |||||
| BCW67A | Galaxy Microelectronics | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | - | |||||
| BCW30 | Galaxy Microelectronics | General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 32V; IC (A): 0.5A; HFE Min: 215; HFE Max: 500; VCE (V): 5V; IC (mA): 2mA; VCE(SAT) (V): 0.7V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): - MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
| BCW71 | Galaxy Microelectronics | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 0.1A; HFE Min: 110; HFE Max: 220; VCE (V): 5V; IC (mA): 2mA; VCE(SAT) (V): 0.25V; IC (mA)1: 10mA; IB (mA): 0.5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.25W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
| BCW66F | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
| BCW60B | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
| BCW65C | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
| BCW67B | Galaxy Microelectronics | 32V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 32V, 0.8A, 160, 400, 1V | - | |||||
| BCW67A | Galaxy Microelectronics | 32V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 32V, 0.8A, 100, 250, 1V | - | |||||
| BCW68F | Galaxy Microelectronics | 45V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 45V, 0.8A, 100, 250, 1V | - | |||||
| BCW68H | Galaxy Microelectronics | 45V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 45V, 0.8A, 250, 630, 1V | - | |||||
| BCW68G | Galaxy Microelectronics | 45V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 45V, 0.8A, 160, 400, 1V | - | |||||
| BCW67C | Galaxy Microelectronics | 32V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 32V, 0.8A, 250, 630, 1V | - | |||||
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