对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
MMBTH10 | Galaxy Microelectronics | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 25V; IC (A): 0.05A; HFE Min: 60; VCE (V): 10V; IC (mA): 4mA; VCE(SAT) (V): 0.5V; IC (mA)1: 4mA; IB (mA): 0.4mA; FT Min (MHz): 650 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | - | |||||
MMBTH10 | Galaxy Microelectronics | 25V,0.05A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 25V, 0.05A, 60, -, 10V | - | |||||
AD | CLF1G0035-100 | Ampleon | 射频/微波组件,CLF1G0035-100 - 100W Broadband RF power GaN HEMT |