对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
SB170 | Galaxy Microelectronics | Rectifier Diode, | - | |||||
SB1100 | Galaxy Microelectronics | Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 100V; IAV Max (A): 1A; VFM Max (V): 0.85V; @ IF (A): 1A; IFSM Max (A): 40A; IR Max (uA): 500uA; @VR (V): 100V; Package: DO-41 | - | |||||
AD | FFSP1665A | Onsemi | 碳化硅二极管,FFSP1665A - SiC Diode - 650V, 16A, TO-220-2 | |||||
SB130S | Galaxy Microelectronics | Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 1A; VFM Max (V): 0.55V; @ IF (A): 1A; IFSM Max (A): 40A; IR Max (uA): 500uA; @VR (V): 30V; Package: A-405 | - | |||||
SB1A0 | Galaxy Microelectronics | Rectifier Diode, | - | |||||
2SB1185F | Galaxy Microelectronics | Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, | - | |||||
2SB1188PG | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
2SB1218A | Galaxy Microelectronics | General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 0.2A; HFE Min: 160; HFE Max: 460; VCE (V): 10V; IC (mA): 2mA; VCE(SAT) (V): 0.5V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 60 MHz; PTM Max (W): 0.15W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323 | - | |||||
2SB1386G | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
2SB1260R | Galaxy Microelectronics | Small Signal Bipolar Transistor, | - | |||||
2SB1261M | Galaxy Microelectronics | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, | - | |||||
2SB1241I | Galaxy Microelectronics | 80V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 120, 390, 3V | - | |||||
2SB1116 | Galaxy Microelectronics | 50V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 50V, 1A, 135, 600, 2V | - | |||||
2SB1124 | Galaxy Microelectronics | 50V,3A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 50V, 3A, 100, 560, 2V | - | |||||
SB160 | Galaxy Microelectronics | 1A,60V,Schottky Barrier Rectifiers, Diodes, Single, 60V, 1A, 0.7V, 1A, 40A | - | |||||
SB1150 | Galaxy Microelectronics | 1A,150V,Schottky Barrier Rectifiers, Diodes, Single, 150V, 1A, 0.95V, 1A, 40A | - | |||||
SB120 | Galaxy Microelectronics | 1A,20V,Schottky Barrier Rectifiers, Diodes, Single, 20V, 1A, 0.55V, 1A, 40A | - | |||||
2SB1132 | Galaxy Microelectronics | 32V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 32V, 1A, 82, 390, 3V | - | |||||
2SB1188 | Galaxy Microelectronics | 32V,2A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 32V, 2A, 82, 390, 3V | - | |||||
2SB1184 | Galaxy Microelectronics | 50V,3A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 50V, 3A, 82, 390, 3V | - | |||||
2SB1694 | Galaxy Microelectronics | 30V,1A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 30V, 1A, 270, 680, 2V | - |