TC1

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 0.47; VI(OFF) Max (V): 0.3V; VI(ON) Min (V): 2.5V; PTOT (mW): 200mW; Package: SOT-323

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 70mA; GI: 68; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 47K Ohm; R1/R2 Typ: 0.21276595745; VI(OFF) Max (V): 0.3V; VI(ON) Min (V): 1.4V; PTOT (mW): 200mW; Package: SOT-323

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 33; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 1K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 0.1; VI(OFF) Max (V): 0.3V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 24; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 4.7K Ohm; R1/R2 Typ: 2.1276595745; VI(OFF) Max (V): 0.8V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323

Small Signal Bipolar Transistor,

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 80; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 2.2K Ohm; R2 (KΩ): 47K Ohm; R1/R2 Typ: 0.046808510638; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 1.1V; PTOT (mW): 200mW; Package: SOT-23

Small Signal Bipolar Transistor,

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 33; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 2.2K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 0.22; VI(OFF) Max (V): 0.3V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23

50V,30mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 30mA, 56, 0.3V, 250(typ)

50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 0.1V, 250(typ), 4.7kΩ

50V,100mA,NPN Bipolar Digital Transistor, 二极管, NPN, 50V, 100mA, 80, 0.3V, 250(typ)

50V,100mA,NPN Bipolar Digital Transistor, 二极管, NPN, 50V, 100mA, 80, 0.3V, 250(typ)

50V,100mA,NPN Bipolar Digital Transistor, 二极管, NPN, 50V, 100mA, 24, 0.3V, 250(typ)

50V,50mA,NPN Bipolar Digital Transistor, 二极管, NPN, 50V, 50mA, 30, 0.3V, 250(typ)

50V,30mA,PNP Bipolar Digital Transistor, 二极管, NPN, 50V, 30mA, 56, 0.3V, 250(typ)

50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 0.1V, 250(typ), 47kΩ

50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 30, 0.3V, 250(typ)

50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 80, 0.3V, 250(typ)