对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
TIP31A | Galaxy Microelectronics | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, | - | |||||
TIP122 | Galaxy Microelectronics | Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 5A; HFE Min: 1000; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 4V; IC (mA)1: 5000mA; IB (mA): 20mA; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | - | |||||
AD | FD600R17KE3B2NOSA1 | Infineon Technologies | IGBT模块,FD600R17 - IGBT Module | |||||
TIP42CG | Galaxy Microelectronics | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, | - | |||||
TIP31AG | Galaxy Microelectronics | Power Bipolar Transistor, | - | |||||
TIP31B | Galaxy Microelectronics | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, | - | |||||
TIP41CG | Galaxy Microelectronics | Power Bipolar Transistor, | - | |||||
TIP127 | Galaxy Microelectronics | Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 100V; IC (A): 5A; HFE Min: 1000; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 4V; IC (mA)1: 5000mA; IB (mA): 20mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | - | |||||
TIP32 | Galaxy Microelectronics | Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 40V; IC (A): 3A; HFE Min: 10; HFE Max: 50; VCE (V): 4V; IC (mA): 3000mA; VCE(SAT) (V): 1.2V; IC (mA)1: 3000mA; IB (mA): 375mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | - | |||||
TIP31BG | Galaxy Microelectronics | Power Bipolar Transistor, | - | |||||
TIP32C | Galaxy Microelectronics | Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 100V; IC (A): 3A; HFE Min: 10; HFE Max: 50; VCE (V): 4V; IC (mA): 3000mA; VCE(SAT) (V): 1.2V; IC (mA)1: 3000mA; IB (mA): 375mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | - | |||||
TIP32A | Galaxy Microelectronics | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, | - | |||||
TIP31 | Galaxy Microelectronics | Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 3A; HFE Min: 10; HFE Max: 50; VCE (V): 4V; IC (mA): 3000mA; VCE(SAT) (V): 1.2V; IC (mA)1: 3000mA; IB (mA): 375mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | - | |||||
TIP42C | Galaxy Microelectronics | 100V,6A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 100V, 6A, 15, 75, 4V | - | |||||
TIP31C | Galaxy Microelectronics | 100V,3A,Medium Power PNP Bipolar Transistor, Diodes, NPN, 100V, 3A, 10, 75, 4V | - | |||||
TIP122 | Galaxy Microelectronics | 100V,5A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 100V, 5A, 1000, —, 3V | - | |||||
TIP41C | Galaxy Microelectronics | 100V,6A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 100V, 6A, 15, 75, 4V | - | |||||
TIP31 | Galaxy Microelectronics | 40V,3A,Medium Power PNP Bipolar Transistor, Diodes, NPN, 40V, 3A, 10, 75, 4V | - | |||||
TIP127 | Galaxy Microelectronics | 100V,5A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 100V, 5A, 1000, —, 3V | - | |||||
TIP31B | Galaxy Microelectronics | 80V,3A,Medium Power PNP Bipolar Transistor, Diodes, NPN, 80V, 3A, 10, 75, 4V | - | |||||
TIP31A | Galaxy Microelectronics | 60V,3A,Medium Power PNP Bipolar Transistor, Diodes, NPN, 60V, 3A, 10, 75, 4V | - |