对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BUZ42 | Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ76 | Harris Semiconductor | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
AD | 2SC3735-T1B-A | Renesas | 双极晶体管,2SC3735 - RF Small Signal Bipolar Transistor, 0.2A, NPN | |||||
BUZ71 | Harris Semiconductor | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ71A | Harris Semiconductor | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ76A | Harris Semiconductor | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ21 | Harris Semiconductor | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ20 | Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ73A | Harris Semiconductor | Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ351 | Harris Semiconductor | Power Field-Effect Transistor, 11.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | - | |||||
BUZ72A | Harris Semiconductor | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ60B | Harris Semiconductor | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ60 | Harris Semiconductor | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ45A | Harris Semiconductor | Power Field-Effect Transistor, 8.3A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | - | |||||
BUZ45B | Harris Semiconductor | Power Field-Effect Transistor, 10A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | - | |||||
BUZ32 | Harris Semiconductor | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
BUZ11 | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
BUZ45 | Harris Semiconductor | Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | - | |||||
BUZ41A | Harris Semiconductor | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - |