对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2SK1225 | Hitachi Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
2SK431IHEUL | Hitachi Ltd | Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET | - | |||||
AD | 2SK3714-S12-AZ | Renesas | MOSFET/FET,2SK3714-S12-AZ - Switching N-Channel Power MOSFET | |||||
2SK2553(S) | Hitachi Ltd | Power Field-Effect Transistor, 50A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | - | |||||
2SK2113YY-TR | Hitachi Ltd | RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel | - | |||||
2SK2204(S) | Hitachi Ltd | Power Field-Effect Transistor, 0.022ohm, N-Channel, Metal-oxide Semiconductor FET | - | |||||
2SK2685ZT-TL | Hitachi Ltd | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | - | |||||
2SK323KB01 | Hitachi Ltd | Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET | - | |||||
2SK217ZDTL | Hitachi Ltd | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, MPAK-3 | - | |||||
2SK2851 | Hitachi Ltd | Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92MOD, 3 PIN | - | |||||
2SK2685 | Hitachi Ltd | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, P-Channel, High Electron Mobility FET, CMPAK-4 | - | |||||
2SK3134(S) | Hitachi Ltd | Power Field-Effect Transistor, 75A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | - | |||||
2SK494DTZ | Hitachi Ltd | Small Signal Field-Effect Transistor, 0.1A I(D), 22V, 1-Element, N-Channel, Silicon, Junction FET, SPAK-3 | - | |||||
2SK2059(L) | Hitachi Ltd | Power Field-Effect Transistor, 3A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
2SK2059(S)-(3) | Hitachi Ltd | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
2SK1698FYUR | Hitachi Ltd | Power Field-Effect Transistor, 0.3A I(D), 100V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
2SK1532XDDUL | Hitachi Ltd | Small Signal Field-Effect Transistor, 0.01A I(D), 50V, 1-Element, N-Channel, Silicon, Junction FET | - | |||||
2SK3140 | Hitachi Ltd | Power Field-Effect Transistor, 60A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220CFM, 3 PIN | - | |||||
2SK2553(S)TL | Hitachi Ltd | Power Field-Effect Transistor, 50A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
2SK1762 | Hitachi Ltd | Power Field-Effect Transistor, 0.35ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN | - | |||||
2SK322WRUL | Hitachi Ltd | Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, MPAK-3 | - |