对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRF5804 | Infineon Technologies AG | Transistor | - | |||||
IRF1010-019PBF | Infineon Technologies AG | 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | - | |||||
AD | IRF6785MTRPBF | Infineon Technologies | 功率MOSFET,IRF6785 - 12V-300V N-Channel Power MOSFET | |||||
IRF641-006PBF | Infineon Technologies AG | 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRF9633-001 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFI1310G-031 | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFI520N-003PBF | Infineon Technologies AG | 7.2A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFR120ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | ¥6.6671 | |||||
IRFBF32-009 | Infineon Technologies AG | Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFS4310ZTRRPBF | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | - | |||||
IRFI540-005 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRF3315-013PBF | Infineon Technologies AG | 21A, 150V, 0.082ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | - | |||||
IRF7907PBF-1 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
IRF9393TRPBF | Infineon Technologies AG | Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | ¥4.7104 | |||||
IRF9Z24N-031 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFJ120 | Infineon Technologies AG | Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-213AA, | - | |||||
IRFR2307Z | Infineon Technologies AG | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | - | |||||
IRF2807-018 | Infineon Technologies AG | Power Field-Effect Transistor, 71A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
IRFI3205-108PBF | Infineon Technologies AG | 64A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRF615-006PBF | Infineon Technologies AG | 2.2A, 250V, 3ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRF9130EC | Infineon Technologies AG | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | - |