对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRFP9242 | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | - | |||||
IRFP044N-207 | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
AD | IRFR9310PBF | Arrow | Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK | |||||
IRFP064N-207 | Infineon Technologies AG | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP054N-207 | Infineon Technologies AG | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFPF20 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
IRFP054N-201PBF | Infineon Technologies AG | 81A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFPG52PBF | Infineon Technologies AG | 5.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | - | |||||
IRFP064N-204 | Infineon Technologies AG | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP064N-204PBF | Infineon Technologies AG | 110A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFP064N-201 | Infineon Technologies AG | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFPS3815PBF | Infineon Technologies AG | Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN | ¥37.2000 | |||||
IRFP4310ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | ¥24.4148 | |||||
IRFP260MPBF | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | ¥18.7806 | |||||
IRFP3077PBF | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 75V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | ¥24.4629 | |||||
IRFP2907 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | - | |||||
IRFPG52 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | - | |||||
IRFPS60N50CPBF | Infineon Technologies AG | Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN | - | |||||
IRFP064N-203 | Infineon Technologies AG | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP245 | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | - | |||||
IRFP054N-203 | Infineon Technologies AG | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - |