对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
XE162FN40F80LAAFXQSA1 | Infineon Technologies AG | Microcontroller, 16-Bit, FLASH, 80MHz, CMOS, PQFP64, LQFP-64 | - | |||||
D121N20BHOSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 230A, 2000V V(RRM), Silicon, | - | |||||
AD | RA4E1 | Renesas | 100MHz Arm® Cortex®-M33 MCU with Balanced Low Power Consumption & Optimized Feature Integration, 256kB - 512kB Flash/128kB SRAM | |||||
SGP30N60HKSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | - | |||||
IPP052N06L3GHKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | - | |||||
FD800R17KF6CB2NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
FD800R33KF2CNOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 | ¥14043.5003 | |||||
BSP300L6327HUSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | - | |||||
DZ435N40KHOSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 700A, 4000V V(RRM), Silicon, MODULE-2 | - | |||||
FZ1200R17HE4NPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor | - | |||||
DD106N22KHOSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 2 Element, 115A, 2200V V(RRM), Silicon, MODULE-3 | - | |||||
DD600N16KAHPSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 2 Element, 600A, 1600V V(RRM), Silicon, MODULE-3 | ¥1953.8357 | |||||
FF900R12IP4BOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11 | - | |||||
38DN06ELEMHOSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 5095A, 600V V(RRM), Silicon, | - | |||||
BG5412KH6327XTSA1 | Infineon Technologies AG | RF Small Signal Field-Effect Transistor | - | |||||
TT251N14KOFHOSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MODULE-7 | - | |||||
T1851N70TOHHOSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 3940A I(T)RMS, 7000V V(DRM), 7000V V(RRM), 1 Element | - | |||||
IDC06S60CEX1SA1 | Infineon Technologies AG | Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon Carbide, 1.45 X 1.354 MM, DIE-2 | - | |||||
IKP01N120H2XKSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 3.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | - | |||||
T1049N18TOFHOSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 1870A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element | - | |||||
FF600R17KF6CB2NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 975A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 | - |