SA2

Power Field-Effect Transistor,

Insulated Gate Bipolar Transistor, 17A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220-3-FP, 3 PIN

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9

Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, 4.60 X 3.05 MM, DIE-1

Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Power Field-Effect Transistor,

Insulated Gate Bipolar Transistor,

Insulated Gate Bipolar Transistor,

Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, DIE-1

Power Field-Effect Transistor, 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, 12.56 X 11.31 MM, DIE-2

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 10.39 X 9.50 MM, DIE

Rectifier Diode,