对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BSM150GAL120D | Infineon Technologies AG | Transistor | - | |||||
BSM181F | Infineon Technologies AG | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | - | |||||
AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
BSM15GP60 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24 | - | |||||
BSM150GD60DLC | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN | - | |||||
BSM150GXR120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES | - | |||||
BSM10GD120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | - | |||||
BSM100GAL120DLCK | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | - | |||||
BSM100GB60DLC | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | - | |||||
BSM100GAL120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN | - | |||||
BSM100GD60DLCBOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN | ¥1245.7829 | |||||
BSM100GB120DLCHOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | ¥975.5135 | |||||
SAF-XC164SM-16F40F | Infineon Technologies AG | Microcontroller, 16-Bit, FLASH, 80166 CPU, 40MHz, CMOS, PQFP64, 0.50 MM PITCH, GREEN, PLASTIC, TQFP-64 | - | |||||
BSM10GP60 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-24 | - | |||||
BSM100GD120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39 | - | |||||
BSM15GD120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | - | |||||
BSM100GAL120DN2HOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN | - | |||||
BSM100GB120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | - | |||||
BSM151FR | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4 | - | |||||
BSM15GD120D2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, | - | |||||
BSM111AR | Infineon Technologies AG | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, | - |