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” 的搜索结果(共 115 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 BSM150GAL120D Infineon Technologies AG
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM181F Infineon Technologies AG
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
获取价格 - ECAD2
请求模型
request
数据手册
替代料
AD CLF1G0060-30 Ampleon
射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT
对比 BSM15GP60 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM150GD60DLC Infineon Technologies AG
Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM150GXR120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM10GD120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
获取价格 - ECAD2
ECAD
footprint 3dModel
数据手册
替代料
对比 BSM100GAL120DLCK Infineon Technologies AG
Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GB60DLC Infineon Technologies AG
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-7
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GAL120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GD60DLCBOSA1 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
获取价格 ¥1245.7829 ECAD2
请求模型
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数据手册
替代料
对比 BSM100GB120DLCHOSA1 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
获取价格 ¥975.5135 ECAD2
请求模型
request
数据手册
替代料
对比 SAF-XC164SM-16F40F Infineon Technologies AG
Microcontroller, 16-Bit, FLASH, 80166 CPU, 40MHz, CMOS, PQFP64, 0.50 MM PITCH, GREEN, PLASTIC, TQFP-64
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM10GP60 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-24
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GD120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM15GD120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GAL120DN2HOSA1 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM100GB120DN2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM151FR Infineon Technologies AG
Power Field-Effect Transistor, 56A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM15GD120D2 Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES,
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 BSM111AR Infineon Technologies AG
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
获取价格 - ECAD2
请求模型
request
数据手册
替代料
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