对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
TD200F13KEM-K | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element | - | |||||
TD200F13KSB | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element, MODULE-5 | - | |||||
AD | BTA410Y-600CT,127 | WeEn | 晶体闸流管/双向可控硅,WeEn - BTA410Y-600CT - 3 Quadrant TRIAC - TO-220AB | |||||
TD200F08KFL | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, MODULE-5 | - | |||||
TD200F12KSL-A | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) | - | |||||
TD210N16KOFHPSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5 | ¥1118.2778 | |||||
TD200F11KEL-A | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1100V V(RRM) | - | |||||
TD200F12KSL | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5 | - | |||||
TD200F10KSC-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element | - | |||||
TD200F13KSC-K | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element | - | |||||
TD285N16KOFHPSA2 | Infineon Technologies AG | Silicon Controlled Rectifier, 450A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5 | ¥1147.2409 | |||||
TD250N14KOF-K | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 250000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 | - | |||||
TD200F08KSC-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element | - | |||||
TD200F13KSB-K | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1300V V(RRM) | - | |||||
TD200F13KSM | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element, MODULE-5 | - | |||||
TD215N20KOC | Infineon Technologies AG | Silicon Controlled Rectifier | - | |||||
TD200F08KSM-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element | - | |||||
TD200F13KSC-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element | - | |||||
TD210N14KOFHOSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 | - | |||||
TD200F11KEM | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, MODULE-5 | - | |||||
TD250N18KOFHPSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-5 | ¥1085.4982 |