对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BSS806NL6327HTSA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, | - | |||||
BC858CWH6327XTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 | - | |||||
AD | SCTW35N65G2V | Arrow | Trans MOSFET N-CH SiC 650V 45A 3-Pin HIP-247 Tube | |||||
TLE4296GV33HTSA1 | Infineon Technologies AG | Fixed Positive LDO Regulator, 3.3V, 0.3V Dropout, PDSO5, GREEN, PLASTIC, SCT-595, 5 PIN | ¥12.3196 | |||||
BCX71JE6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, | ¥1.4494 | |||||
BAR90098LRHE6327XTSA1 | Infineon Technologies AG | Pin Diode, | - | |||||
BAS3007ARPPE6327HTSA1 | Infineon Technologies AG | Bridge Rectifier Diode, Schottky, 1 Phase, 0.9A, 30V V(RRM), Silicon, | ¥2.1016 | |||||
TLE4966HNTSA1 | Infineon Technologies AG | Analog Circuit, 1 Func, BIPolar, PDSO6, PLASTIC, TSOP-6 | - | |||||
SMBT3904PNH6327XTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6 | - | |||||
BAS40E6327BTSA1 | Infineon Technologies AG | Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN | - | |||||
BAL74E6327HTSA1 | Infineon Technologies AG | Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon, | ¥0.4348 | |||||
BAR9002LSE6327XTSA1 | Infineon Technologies AG | Pin Diode, 80V V(BR), Silicon, ROHS COMPLIANT, LEADLESS, TSLP-2 | - | |||||
BCR135WH6327XTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | - | |||||
BSS84PH6327XTSA2 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | ¥2.2465 | |||||
BBY5102WH6327XTSA1 | Infineon Technologies AG | Variable Capacitance Diode | - | |||||
BCR133WH6327XTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | - | |||||
BSP61E6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-4 | - | |||||
ESD133B1W01005E6327XTSA1 | Infineon Technologies AG | Trans Voltage Suppressor Diode, | ¥2.6088 | |||||
BAW78DH6327XTSA1 | Infineon Technologies AG | Rectifier Diode, 1 Element, 1A, Silicon, ROHS COMPLIANT, SOT-89, 3 PIN | - | |||||
BAS4006WH6327XTSA1 | Infineon Technologies AG | Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 | ¥2.8987 | |||||
BF771E6327HTSA1 | Infineon Technologies AG | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, | ¥2.4639 |