对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRHN7450SEPBF | International Rectifier | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | - | |||||
IRHM7450SE | International Rectifier | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | - | |||||
AD | BLF242 | Ampleon | 射频/微波组件,BLF242 - VHF Push-Pull Power VDMOS Transistor | |||||
IRF7459UTRPBF | International Rectifier | Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | - | |||||
IRF7452QPBF | International Rectifier | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | - | |||||
IRF7452QTRPBF | International Rectifier | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
IRF7459TRPBF | International Rectifier | Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | - | |||||
MBR745PBF | International Rectifier | Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, TO-220AC, PLASTIC, TO-220AC, 3 PIN | - | |||||
MBRB745TRRPBF | International Rectifier | Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, PLASTIC, SMD-220, D2PAK-3 | - | |||||
IRF7458TRPBF | International Rectifier | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | - | |||||
IRH7450SE | International Rectifier | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | - | |||||
IRF7451PBF | International Rectifier | Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | - | |||||
IRF7452 | International Rectifier | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | - | |||||
MBR745 | International Rectifier | Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, TO-220AC, PLASTIC, TO-220AC, 3 PIN | - | |||||
MBRB745TRL | International Rectifier | Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, PLASTIC, SMD-220, D2PAK-3 | - | |||||
IRH7450PBF | International Rectifier | Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | - | |||||
IRF7450PBF | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | - | |||||
IRF7450TRPBF | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | ¥18.5518 | |||||
IRHM7450PBF | International Rectifier | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | - | |||||
IRHM7450UPBF | International Rectifier | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | - | |||||
IRF7459UPBF | International Rectifier | Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | - |