对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRG4BC30KD-STRL | International Rectifier | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | - | |||||
IRGBC30MD2-STRR | International Rectifier | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | - | |||||
AD | FQD13N10LTM | Arrow | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R | |||||
IRFIBC30G-018 | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRG4BC30K-S | International Rectifier | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | - | |||||
IRFBC30-019 | International Rectifier | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
IRG4BC30SPBF | International Rectifier | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | - | |||||
IRG4BC30K-STRL | International Rectifier | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | - | |||||
IRFBC32-010PBF | International Rectifier | Power Field-Effect Transistor, 3.2A I(D), 600V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRG4BC30KD-STRR | International Rectifier | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | - | |||||
IRFIBC30G-005 | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFBC30-007 | International Rectifier | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
IRFBC32-011 | International Rectifier | Power Field-Effect Transistor, 3.2A I(D), 600V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRFIBC30G-003 | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRGBC30K-S | International Rectifier | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN | - | |||||
IRFBC30-005 | International Rectifier | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - | |||||
IRFIBC30G-004 | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRGBC30M | International Rectifier | Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | - | |||||
IRFBC32-002 | International Rectifier | Power Field-Effect Transistor, 3.2A I(D), 600V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRFIBC30G-031 | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFIBC30G-005PBF | International Rectifier | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - |