对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IXTQ200N10T | Littelfuse Inc | Power Field-Effect Transistor, | ¥297.5536 | |||||
IXTQ26N60P | Littelfuse Inc | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
AD | F3L200R07PE4BOSA1 | Infineon Technologies | IGBT模块,F3L200R07 - IGBT Module | |||||
IXTQ26N50P | Littelfuse Inc | Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | ¥29.2771 | |||||
IXTQ22N50P | Littelfuse Inc | Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | ¥30.2916 | |||||
IXTQ22N60P | Littelfuse Inc | Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | ¥51.5247 | |||||
IXTQ26P20P | Littelfuse Inc | Power Field-Effect Transistor, | ¥84.2803 | |||||
IXTQ24N55Q | Littelfuse Inc | Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | - |