对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FPM27500QFNSQ | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, N-Channel | - | |||||
FPM2750QFNSR | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, N-Channel | - | |||||
AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
FPM2750QFN | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, 4 X 4 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, QFN-16 | - | |||||
FPM27500QFNSB | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, N-Channel | - | |||||
FPM2750QFNSQ | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, N-Channel | - |