KRC

Power Field-Effect Transistor, 81A I(D), 1200V, 0.0234ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor, 26A I(D), 1200V, 0.081ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor, 24A I(D), 1200V, 0.137ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor, 43A I(D), 1200V, 0.047ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor,

Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor,

Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Power Field-Effect Transistor,