对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FTS1004 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 3A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
LE28F4001CTS-12 | SANYO Electric Co Ltd | Flash, 512KX8, 120ns, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32 | - | |||||
AD | A2T26H160-24SR3 | NXP Semiconductor | 射频/微波组件,A2T26H160 - Airfast RF Power LDMOS Transistor | |||||
FTS1001 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 4A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
FTS1011 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 6A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
FTS1002 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 4A I(D), 30V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
LE28CW1001DTS-15 | SANYO Electric Co Ltd | Flash, 128KX8, 150ns, PDSO32, 8 X 14 MM, TSOP-32 | - | |||||
FTS1018 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
LE28CV1001DTS-13 | SANYO Electric Co Ltd | Flash, 128KX8, 130ns, PDSO32, 8 X 14 MM, TSOP-32 | - | |||||
FTS1012 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
LC35W1000BTS-10U | SANYO Electric Co Ltd | Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32 | - | |||||
FTS1003 | SANYO Electric Co Ltd | Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | - | |||||
LE28CV1001DTS-15 | SANYO Electric Co Ltd | Flash, 128KX8, 150ns, PDSO32, 8 X 14 MM, TSOP-32 | - |