Fri Mar 29 2024 21:10:57 GMT+0800 (China Standard Time)

随身查
mini app
扫码添加小程序
手机随时查器件

LM5

” 的搜索结果(共 31 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 ELM5964-7PST SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5053-25F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
AD LM5101AMX/NOPB Texas Instruments
桥式驱动器,高低压开关,LM5101A 3A High Voltage High-Side and Low-Side Gate Driver
对比 FLM5964-8F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-4F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5053-4F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 ELM5964-10F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-18F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-8F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5972-4F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-35F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 ELM5964-16F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5053-8F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-45F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 ELM5964-4PS SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5964-18F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5972-12F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-25F SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5053-12F SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 ELM5964-7PS SUMITOMO ELECTRIC Device Innovations Inc
Transistor
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比 FLM5359-4C SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
获取价格 - ECAD2
请求模型
request
数据手册
替代料
对比栏已满,请删除不需要的器件再继续添加哦!
对比栏
取消