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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| ELM7179-7PS | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| ELM7179-7PST | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| AD | FDZ372NZ | Onsemi | MOSFET/FET,MOSFET/FET,Small Signal Field-Effect Transistor, 4.7A, 20V, N-Channel MOSFET | |||||
| ELM7785-7PST | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM7179-8F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| ELM7179-4PS | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
| FLM7785-4F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| ELM7785-35F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM7179-18F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| ELM7785-10F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM7179-12F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| ELM7179-16F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM7179-4F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| ELM7785-60F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, IK, 2 PIN | - | |||||
| FLM7785-18F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM7785-6F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| FLM7785-12F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM7785-8F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| ELM7785-4PS | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
| FLM7179-6F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| FLM7185-12F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
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