对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FLM6472-18F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM6472-6F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
AD | G2R50MT33K | Arrow | Silicon Carbide MOSFET N-Channel Enhancement Mode | |||||
FLM6472-25F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
ELM6472-4PS | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
ELM6472-10F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
FLM6472-4F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
FLM6472-8F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
FLM6472-12F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
ELM6472-4PST | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - |