对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
K4M56163PG-BF90 | Samsung Semiconductor | Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | - | |||||
K4S281632B-TL1L | Samsung Semiconductor | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | - | |||||
AD | S25FL127SABMFV000 | Infineon Technologies | 串行闪存,S25FL127S - (16 MB) 3.0 V SPI Flash Memory | |||||
K4M641633K-BG1LT | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54 | - | |||||
K4S64163LF-AP15 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 9ns, CMOS, PBGA52, CSP-52 | - | |||||
K7A163600M-HC16T | Samsung Semiconductor | Standard SRAM, 512KX36, 3.5ns, CMOS, PBGA119 | - | |||||
K4H561638F-UCB3 | Samsung Semiconductor | DDR DRAM, 16MX16, CMOS, PDSO66, | - | |||||
K4X56163PG-LEC30 | Samsung Semiconductor | DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60 | - | |||||
K4S561632N-LI600 | Samsung Semiconductor | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54 | - | |||||
K4T51163QE-ZLE7T | Samsung Semiconductor | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA90 | - | |||||
K4M561633G-BL75 | Samsung Semiconductor | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54 | - | |||||
K4S511633F-YL1L | Samsung Semiconductor | Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | - | |||||
K4S641632K-TL75 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | - | |||||
K4H561638H-ZPB3 | Samsung Semiconductor | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | - | |||||
K4S281632D-TC750 | Samsung Semiconductor | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | - | |||||
K4S641632C-TL10T | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, | - | |||||
K4T56163QI-ZLE6T | Samsung Semiconductor | DRAM | - | |||||
K7N163631B-EI16 | Samsung Semiconductor | ZBT SRAM, 512KX36, 3.5ns, CMOS, PBGA165 | - | |||||
K4S64163LF-RG75 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, CSP-54 | - | |||||
K7R163682B-EI250 | Samsung Semiconductor | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | - | |||||
K4S641632A-TL1257 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54 | - |