对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRFW540A | Samsung Semiconductor | Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFZ20 | Samsung Semiconductor | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
AD | IRF6785MTRPBF | Infineon Technologies | 功率MOSFET,IRF6785 - 12V-300V N-Channel Power MOSFET | |||||
IRF9613 | Samsung Semiconductor | Power Field-Effect Transistor, 1.5A I(D), 150V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFP121 | Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
IRFU015 | Samsung Semiconductor | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRFR9025 | Samsung Semiconductor | Power Field-Effect Transistor, 9A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRFSZ25 | Samsung Semiconductor | Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | - | |||||
IRFR224A | Samsung Semiconductor | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
IRFR210A | Samsung Semiconductor | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
IRFP9143 | Samsung Semiconductor | Power Field-Effect Transistor, 15A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
IRFS531 | Samsung Semiconductor | Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFS450 | Samsung Semiconductor | Power Field-Effect Transistor, 9A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3 | - | |||||
IRFR422 | Samsung Semiconductor | Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IRFS732 | Samsung Semiconductor | Power Field-Effect Transistor, 3A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | - | |||||
IRF532 | Samsung Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRF642 | Samsung Semiconductor | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRF513 | Samsung Semiconductor | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFS9240 | Samsung Semiconductor | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3 | - | |||||
IRFU221 | Samsung Semiconductor | Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | - | |||||
IRFP9133 | Samsung Semiconductor | Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - |