samsung semiconductorirfp中文数据手册-datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	IRFP9133	Samsung Semiconductor	Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP150	Samsung Semiconductor	Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
AD	IRF3710PBF	Infineon Technologies	MOSFET/FET,IRF3710 - 12V-300V N-Channel Power MOSFET 数据手册立即购买了解更多		数据手册立即购买
对比	IRFP443	Samsung Semiconductor	Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP441	Samsung Semiconductor	Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP452	Samsung Semiconductor	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP9143	Samsung Semiconductor	Power Field-Effect Transistor, 15A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP9230	Samsung Semiconductor	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP250	Samsung Semiconductor	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP121	Samsung Semiconductor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRFP230	Samsung Semiconductor	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP9123	Samsung Semiconductor	Transistor	获取价格 -	请求模型数据手册替代料
对比	IRFP9221	Samsung Semiconductor	Transistor	获取价格 -	请求模型数据手册替代料
对比	IRFP322	Samsung Semiconductor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	IRFP432	Samsung Semiconductor	Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP140A	Samsung Semiconductor	Power Field-Effect Transistor, 31A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP9141	Samsung Semiconductor	Power Field-Effect Transistor, 19A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP341	Samsung Semiconductor	Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP9122	Samsung Semiconductor	Transistor	获取价格 -	请求模型数据手册替代料
对比	IRFP143	Samsung Semiconductor	Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	IRFP250A	Samsung Semiconductor	Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	获取价格 -	请求模型数据手册替代料

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