对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
MMBTH17 | Samsung Semiconductor | Transistor | - | |||||
MMBTH10-T1 | Samsung Semiconductor | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN | - | |||||
AD | A2T21H360-24SR6 | NXP Semiconductor | 射频/微波组件,Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |||||
MMBTH24 | Samsung Semiconductor | Transistor | - | |||||
MMBTH17-T1 | Samsung Semiconductor | RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN | - | |||||
MMBTH10 | Samsung Semiconductor | Transistor | - |