对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
STQ3906 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.01A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon | - | |||||
STQ2000 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.24A I(D), 60V, 10ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
AD | BLF278 | Ampleon | 射频/微波组件,BLF278 - VHF Push-Pull Power VDMOS Transistor | |||||
STQ3467 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon | - | |||||
STQ2222 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.15A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon | - | |||||
STQ3725 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon | - | |||||
STQ2001 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ2484 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.01A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon | - | |||||
STQ2006 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ102 | Silicon Transistor Corporation | Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET | - | |||||
STQ918 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.01A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon | - | |||||
STQ2369 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.01A I(C), 15V V(BR)CEO, 4-Element, NPN, Silicon | - | |||||
STQ3799 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.001A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon | - | |||||
STQ2907 | Silicon Transistor Corporation | Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon | - | |||||
STQ1001 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ2004 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.41A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ302 | Silicon Transistor Corporation | Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET | - | |||||
STQ1004 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ1006 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ1000 | Silicon Transistor Corporation | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
STQ202 | Silicon Transistor Corporation | Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET | - |