对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
TSM60NB380CPROG | Taiwan Semiconductor | Power Field-Effect Transistor, 9.5A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | - | |||||
TSM60NB600CHC5G | Taiwan Semiconductor | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | - | |||||
AD | NVHL020N120SC1 | Arrow | Trans MOSFET N-CH SiC 1.2KV 103A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube | |||||
MUR420SM6G | Taiwan Semiconductor | Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN | - | |||||
TSM6NB60CZC0G | Taiwan Semiconductor | Power Field-Effect Transistor, | - | |||||
TSM6NB60CIC0G | Taiwan Semiconductor | Power Field-Effect Transistor, | - | |||||
MUR360SM6 | Taiwan Semiconductor | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN | - | |||||
TSM6968SDCARV | Taiwan Semiconductor | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8 | - | |||||
TSM6988DCX6RF | Taiwan Semiconductor | Power Field-Effect Transistor, 6A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6 | - | |||||
TSM60NB150CFC0G | Taiwan Semiconductor | Power Field-Effect Transistor, | - | |||||
TSM6981DCARVG | Taiwan Semiconductor | Power Field-Effect Transistor, 5A I(D), 20V, 0.04ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 | - | |||||
TSM680P06CHX0G | Taiwan Semiconductor | Power Field-Effect Transistor | - | |||||
TSM60N900CHC5G | Taiwan Semiconductor | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, IPAK-3 | - | |||||
TSM6N60CHC5G | Taiwan Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
TSM60NB900CHC5G | Taiwan Semiconductor | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | - | |||||
TSM6981DCARF | Taiwan Semiconductor | Transistor | - | |||||
TSM650P02CXRFG | Taiwan Semiconductor | Power Field-Effect Transistor | - | |||||
TSM650N15CSRLG | Taiwan Semiconductor | Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | - | |||||
TSM680P06CHC5G | Taiwan Semiconductor | Power Field-Effect Transistor | - | |||||
MUR460SM6G | Taiwan Semiconductor | Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN | - | |||||
TSM60NB260CIC0G | Taiwan Semiconductor | Power Field-Effect Transistor | - |