对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRF9620 | Vishay Intertechnologies | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | - | |||||
IRFPC60 | Vishay Intertechnologies | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | - | |||||
AD | IRF6785MTRPBF | Infineon Technologies | 功率MOSFET,IRF6785 - 12V-300V N-Channel Power MOSFET | |||||
IRFI9540G | Vishay Intertechnologies | Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPACK-3 | - | |||||
IRFI620G-010PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFI820GPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3 | ¥12.1746 | |||||
IRFD024PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4 | ¥7.6333 | |||||
IRF614FXPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
IRF9520PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | ¥7.4642 | |||||
IRF-18.2UH+-5%RJ4 | Vishay Intertechnologies | General Purpose Inductor, 8.2uH, 5%, Ferrite-Core, | - | |||||
IRF-10.12UH+-5%R36 | Vishay Intertechnologies | General Purpose Inductor, 0.12uH, 5%, Ferrite-Core, | - | |||||
IRFBE30PBF-BE3 | Vishay Intertechnologies | Power Field-Effect Transistor, | ¥20.8708 | |||||
IRF-30.47UH+-5%RJ1 | Vishay Intertechnologies | General Purpose Inductor, 0.47uH, 5%, Ferrite-Core, | - | |||||
IRFR120TRRPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | - | |||||
IRF630PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | ¥4.8554 | |||||
IRFI644G-017 | Vishay Intertechnologies | Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRF510PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | ¥3.8891 | |||||
IRF01RU120J | Vishay Intertechnologies | General Purpose Inductor, 12uH, 5%, Ferrite-Core, | - | |||||
IRF840-024PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | - | |||||
IRFZ24PBF-BE3 | Vishay Intertechnologies | Power Field-Effect Transistor, | - | |||||
IRFR9014TR | Vishay Intertechnologies | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | - |