Wed Feb 24 2021 18:20:41 GMT+0000 (Coordinated Universal Time)

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搜索结果(共 200 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 2N100WR-10M Cobham RFMW Solutions
RF/MICROWAVE FIXED ATTENUATOR
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对比 2N117 Space Power Electronics Inc
Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN
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AD UPG2409T6X-E2-A Renesas
射频/微波开关,Diversity Switch, 50MHz Min, 6000MHz Max, 1 Func, 0.9dB Insertion Loss-Max, GAAS
对比 2N1773 Baneasa SA
Silicon Controlled Rectifier, TO-64
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对比 2N1844A-PBF Digitron Semiconductors
Silicon Controlled Rectifier
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对比 2N10W-10 API Technologies Corp
Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE
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对比 2N1902E3 Microsemi Corporation
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
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对比 2N1116 Central Semiconductor Corp
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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对比 2N1594 Texas Instruments
2N1594
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对比 2N1936 Semitronics Corp
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
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对比 2N1795E3 Microsemi Corporation
Silicon Controlled Rectifier, 110A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN
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对比 BL02N18-6L Galaxy Microelectronics
, Diodes, Single, N, N, 2W, 180W, ±20V
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对比 IPB072N15N3G Inchange Semiconductor Company Ltd
MOSFETs;100A;150V;D²PAK/TO-263
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对比 IRFB52N15D Inchange Semiconductor Company Ltd
MOSFETs;60A;150V;TO-220
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对比 IPP072N10N3 Inchange Semiconductor Company Ltd
MOSFETs;80A;100V;TO-220
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对比 TK32A12N1 Inchange Semiconductor Company Ltd
MOSFETs;60A;120V;TO-220F
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对比 TK32E12N1 Inchange Semiconductor Company Ltd
MOSFETs;60A;120V;TO-220
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对比 TK42A12N1 Inchange Semiconductor Company Ltd
MOSFETs;88A;120V;TO-220F
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对比 AOD2N100 Inchange Semiconductor Company Ltd
MOSFETs;2A;1000V;TO-252
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对比 IPB042N10N3G Inchange Semiconductor Company Ltd
MOSFETs;137A;100V;D²PAK/TO-263
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对比 12N18 Inchange Semiconductor Company Ltd
MOSFETs;12A;180V;TO-220
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