对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2N7000-D26Z | onsemi | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, 2000-REEL | ¥2.9678 | |||||
2N7000_D26Z | Fairchild Semiconductor Corporation | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | - | |||||
AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
2N7000/D26Z | Texas Instruments | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | - | |||||
2N7000D26Z | Fairchild Semiconductor Corporation | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | - | |||||
2N7000_D26Z | onsemi | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | - |