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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SJ319(S) | Hitachi Ltd | Power Field-Effect Transistor, 2.3ohm, P-Channel, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
| 2SJ319(S) | Renesas Electronics Corporation | 2.3ohm, POWER, FET, DPAK-3 | - | |||||
| AD | NVHL020N120SC1 | Arrow | Trans MOSFET N-CH SiC 1.2KV 103A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube | |||||
| 2SJ319S | Renesas Electronics Corporation | 3A, 200V, 2.3ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ319STL-E | Renesas Electronics Corporation | Silicon P Channel MOSFET, DPAK(S), /Embossed Tape | - | |||||
| 2SJ319(S)TR | Renesas Electronics Corporation | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET | - | |||||
| 2SJ319(S)TL | Renesas Electronics Corporation | 3A, 200V, 2.3ohm, P-CHANNEL, Si, POWER, MOSFET | - | |||||
| 2SJ319(S)-(3) | Hitachi Ltd | Transistor | - | |||||
| 2SJ319(S)-(3) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,3A I(D),TO-252VAR | - | |||||
| 2SJ319(S)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,3A I(D),TO-252VAR | - | |||||
| 2SJ319(S)-(1) | Hitachi Ltd | Transistor | - | |||||
| 2SJ319(S)TR | Hitachi Ltd | Power Field-Effect Transistor, 3A I(D), 200V, 2.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
| 2SJ319(S)TL | Hitachi Ltd | Power Field-Effect Transistor, 3A I(D), 200V, 2.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
| 2SJ319(S)-(1) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,3A I(D),TO-252VAR | - | |||||
| 2SJ319(S)-(2) | Hitachi Ltd | Transistor | - | |||||
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