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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SJ387(S) | Renesas Electronics Corporation | 10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ387(S) | Hitachi Ltd | Power Field-Effect Transistor, 10A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
| AD | FGY120T65SPD-F085 | Onsemi | IGBT/MOSFET驱动器,FGY120T65 - IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode | |||||
| 2SJ387S | Hitachi Ltd | 10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ387S | Renesas Electronics Corporation | 10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ387STL-E | Renesas Electronics Corporation | 10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, SC-63, DPAK-3 | - | |||||
| 2SJ387(S)-(2) | Hitachi Ltd | Transistor | - | |||||
| 2SJ387(S)TL | Renesas Electronics Corporation | 10A, 20V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET | - | |||||
| 2SJ387(S)-(3) | Hitachi Ltd | Transistor | - | |||||
| 2SJ387(S)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA | - | |||||
| 2SJ387(S)-(1) | Hitachi Ltd | Transistor | - | |||||
| 2SJ387(S)TR | Renesas Electronics Corporation | 10 A, 20 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET | - | |||||
| 2SJ387(S)-(1) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA | - | |||||
| 2SJ387(S)TL | Hitachi Ltd | Power Field-Effect Transistor, 10A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
| 2SJ387(S)-(3) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA | - | |||||
| 2SJ387(S)TR | Hitachi Ltd | Power Field-Effect Transistor, 10A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
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