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手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SJ506(L) | Renesas Electronics Corporation | 0.18ohm, POWER, FET, SC-63, 3 PIN | - | |||||
| 2SJ506(L) | Hitachi Ltd | Power Field-Effect Transistor, 0.18ohm, SC-63, 3 PIN | - | |||||
| AD | A2T21H360-24SR6 | NXP Semiconductor | 射频/微波组件,Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |||||
| 2SJ506L | Renesas Electronics Corporation | 10A, 30V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ506L-E | Renesas Electronics Corporation | Pch Single Power Mosfet -30V -10A 85Mohm DPAK(L)-(2)/To-251, DPAK(L)-(2), /Tube | - | |||||
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